specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 1 of 6 march 2005 the communications ed g e tm ah103a high gain, high linearity ?-watt amplifier product information product features ? 60 ? 2700 mhz ? +27 dbm p1db ? +46 dbm output ip3 ? 29 db gain @ 900 mhz ? excellent acpr ? mttf > 100 years ? lead-free/green/rohs-compliant soic-8 package w/ heat slug applications ? mobile infrastructure ? w-lan / ism / rfid ? mds / mmds infrastructure product description the ah103a is a high gain, high linearity ?-watt amplifier. this device is comprised of two individual mmic amplifiers internally and can be used with an external interstage match for any of the mobile infrastructure frequency bands. the dual-stage amplifier achieves up to +46 dbm ip3 performance with 29 db gain. the device conforms to wj communications? long history of producing high reliability and quality components. the ah103a has an associated mttf of a minimum of 100 years at a mounting temperature of 85 c and is housed in a lead-free /green/rohs-compliant soic-8 package. all devices are 100% rf & dc tested. the product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high linearity are required. functional diagram 1 2 3 4 8 7 6 5 a mp 1 a mp 2 function pin no. amp2 in 1 amp1 out / bias 1 2 ground 3, 5, 8, backside copper rf in (amp1 in) 4 rf out (amp2 out) 6 bias 2 7 specifications (1) parameter units min typ max operational bandwidth mhz 60 2700 test frequency mhz 900 gain db 29.1 output ip3 db +46 output p1db dbm +27 test frequency mhz 1900 gain db 23.5 25.4 input return loss db 19 output return loss db 11 output ip3 (2) dbm +42 +45 output p1db dbm +25 +26.7 noise figure db 3 supply voltage (amp1) v +4.5 supply voltage (amp2) v +9 operating current (3) ma 225 275 330 1. test conditions unless otherwise noted: 25 oc, vdd1 = +4.5 v, vdd2 = +9 v, in a tuned application circuit. 2. 3oip measured with two tones at an output power of +8 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. 3. amp1 and amp2 have a typical current draw of 75 and 200 ma, respectively. absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -55 to +125 c dc voltage (pin 2) +6 v dc voltage (pin 6, 7) +11 v rf input power (continuous) 4 db above input p1db junction temperature +220 c operation of this device above any of th ese parameters may cause permanent damage. typical performance (1) parameter units typical frequency mhz 900 1900 2140 gain db 29.1 25.4 25 input return loss db 20 19 24 output return loss db 19 11 11 output ip3 dbm +46 +45 +45 output p1db dbm +27 +26.7 +26.3 is-95 ch. power (4) @ -45 dbc acpr dbm +20.7 +20.5 w-cdma ch. power (5) @ -45 dbc acpr / aclr dbm +18.5 noise figure db 2.5 3 2.9 supply bias amp1 +4.5 v @ 75 ma supply bias amp2 +9 v @ 200 ma 4. acpr is measured at 900 and 1900 mhz with a is-95, 9 channels forward, 885 khz offset, 30 khz bw, 1.23 mhz channel bw. 5. aclr is measured at 2140 mhz with a 3g pp w-cdma, test mode l 1+64 dpch, 5 mhz offset, 3.84 mhz channel bw. ordering information part no. description AH103A-G high gain ?-watt amplifier (lead-free/green/rohs-co mpliant soic-8 pkg) ah103a-pcb900 0.7 ? 1.0 ghz evaluation circuit ah103a-pcb1900 1.8 ? 2.0 ghz evaluation circuit ah103a-pcb2140 2.1 ? 2.2 ghz evaluation circuit
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 2 of 6 march 2005 the communications ed g e tm ah103a high gain, high linearity ?-watt amplifier product information typical device data 1 2 3 4 8 7 6 5 amp 1 amp 2 typical ah103a performance chain analysis at 900 mhz cumulative performance stage gain (db) output p1db (dbm) output ip3 (dbm) nf (db) voltage (v) current (ma) gain (db) output p1db (dbm) output ip3 (dbm) nf (db) amplifier 1 14.5 18 39 2.5 +4.5 75 14.5 18 39 2.5 amplifier 2 14.5 27.5 46.5 3.1 +9 200 28.5 26.3 45.7 2.6 ah103a cumulative performance 275 29 +26.3 +45.7 2.6 s-parameters (amplifier #1, v d = +4.5 v, i d = 75 ma, t = 25 c, calibrated to device leads, pin 4 = port 1, pin 2 = port 2) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -5.37 -33.79 15.86 160.65 -22.13 22.13 -10.55 -47.75 200 -8.33 -28.53 14.72 161.63 -21.04 1.23 -16.88 -35.01 400 -8.71 -36.36 14.53 155.57 -21.01 -2.61 -18.18 -26.80 600 -8.77 -47.76 14.39 147.36 -20.88 -5.20 -18.38 -27.81 800 -9.15 -61.06 14.12 139.46 -20.63 -6.95 -19.40 -27.61 1000 -9.05 -73.89 14.00 131.54 -20.79 -8.56 -20.14 -30.37 1200 -9.37 -85.84 13.79 123.95 -20.68 -9.16 -21.80 -36.89 1400 -9.59 -97.65 13.52 115.85 -20.70 -12.14 -21.91 -45.14 1600 -9.64 -111.10 13.20 108.12 -20.64 -13.59 -22.45 -48.69 1800 -9.21 -124.09 12.86 100.77 -20.53 -14.44 -22.22 -46.08 2000 -8.86 -136.42 12.52 93.26 -20.32 -15.72 -22.52 -35.22 2200 -8.31 -148.36 12.43 87.59 -20.44 -19.85 -25.39 -32.83 2400 -8.60 -159.16 12.06 80.18 -20.62 -21.31 -28.55 10.91 2600 -8.80 -170.83 11.72 73.78 -20.23 -23.96 -31.34 53.94 s-parameters (amplifier #2, v d = +9 v, i d = 200 ma, t = 25 c, calibrated to device leads, pin 1 = port 1, pin 6 = port 2) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -10.73 -73.81 16.87 155.39 -19.73 9.77 -13.03 -77.36 200 -17.49 -86.22 15.78 153.56 -19.37 -9.85 -27.33 -71.86 400 -16.10 -103.75 15.50 140.93 -19.51 -21.51 -28.05 -15.36 600 -14.58 -121.40 15.19 125.52 -19.71 -31.31 -22.04 -19.22 800 -12.52 -136.69 14.76 111.04 -20.10 -41.88 -17.78 -26.04 1000 -10.87 -146.69 14.45 96.62 -20.45 -52.24 -14.38 -37.86 1200 -9.59 -156.43 14.01 83.29 -20.94 -60.36 -12.17 -49.84 1400 -8.67 -165.93 13.61 69.48 -21.53 -70.30 -10.50 -64.25 1600 -7.90 -175.53 13.27 56.52 -22.11 -78.33 -9.28 -77.69 1800 -7.15 173.98 12.83 42.38 -22.90 -88.46 -8.06 -89.74 2000 -6.58 162.87 12.44 28.36 -23.56 -96.99 -6.74 -101.88 2200 -5.55 152.83 11.97 14.25 -24.57 -106.84 -5.79 -111.67 2400 -4.74 143.80 11.24 0.41 -25.97 -113.76 -5.03 -121.03 2600 -3.92 136.87 10.64 -11.41 -27.43 -122.11 -4.60 -131.14 evaluation board pcb layout circuit board material: .014? fr-4, 4 layers, .062? total thickness
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 3 of 6 march 2005 the communications ed g e tm ah103a high gain, high linearity ?-watt amplifier product information application circuit: 700 ? 1000 mhz (ah103ag-pcb900) typical rf performance at 25 c frequency 900 mhz gain 29.1 db input return loss 20 db output return loss 19 db output ip3 +46 dbm output p1db +27 dbm is-95a ch. power @ -45 dbc acpr +20.7 dbm noise figure 2.5 db supply voltage +9 supply current 275 ma notes: 1. a voltage regulator is used in this circuit (u2) to drop the +9 v to a +5 v usable supply for th e first internal amplifier. it is permissible to remove the regulator and operate the 1 st amplifier stage directly off of +5 v supply onto te st point 1 (tp1). the use of a +5 v supply on the 1 st amplifier stage requires a dropping resistor of 6.8 . a +4.5 v supply can also be used to bypass the 6.8 and can be applied to test point 2 (tp2). s-parameters 26 27 28 29 30 31 700 750 800 850 900 950 1000 frequency (mhz) gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) s21 s11 s22 wideband s-parameters -30 -20 -10 0 10 20 30 0 500 1000 1500 2000 2500 3000 frequency (mhz) gain ( db ) s21 s11 s22 noise figure 0 1 2 3 4 5 700 750 800 850 900 950 1000 frequency (mhz) noise fi g ure ( db ) output ip3 38 40 42 44 46 48 6 8 10 12 14 16 outpu power per tone (dbm) oip3 ( dbm ) acpr vs. channel power is-95, 9 ch. fwd, 885 khz offset, 30 khz meas bw, 900 mhz -80 -70 -60 -50 -40 14 16 18 20 22 output channel power (dbm) acpr ( dbc )
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 4 of 6 march 2005 the communications ed g e tm ah103a high gain, high linearity ?-watt amplifier product information application circuit: 1900 ? 2000 mhz (ah103ag-pcb1900) typical rf performance at 25 c frequency 1900 mhz gain 25.4 db input return loss 19 db output return loss 11 db output ip3 +45 dbm output p1db +26.7 dbm is-95a ch. power @ -45 dbc acpr +20.5 dbm noise figure 3 db supply voltage +9 v supply current 275 ma notes: 1. a voltage regulator is used in this circuit (u2) to drop the +9 v to a +5 v usable supply for th e first internal amplifier. it is permissible to remove the regulator and operate the 1 st amplifier stage directly off of +5 v supply onto te st point 1 (tp1). the use of a +5 v supply on the 1 st amplifier stage requires a dropping resistor of 6.8 . a +4.5 v supply can also be used to bypass the 6.8 and can be applied to test point 2 (tp2). s-parameters 22 23 24 25 26 27 1800 1850 1900 1950 2000 frequency (mhz) gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) s21 s11 s22 wideband s-parameters -30 -20 -10 0 10 20 30 0 500 1000 1500 2000 2500 3000 frequency (mhz) gain ( db ) s21 s11 s22 noise figure 0 1 2 3 4 5 1800 1850 1900 1950 2000 frequency (mhz) noise fi g ure ( db ) output ip3 38 40 42 44 46 48 6 8 10 12 14 16 output power per tone (dbm) oip3 ( dbm ) acpr vs. channel power is-95, 9 ch. fwd, 885 khz offset, 30 khz meas bw, 1900 mhz -80 -70 -60 -50 -40 14 16 18 20 22 output channel power (dbm) acpr ( dbc )
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 5 of 6 march 2005 the communications ed g e tm ah103a high gain, high linearity ?-watt amplifier product information application circuit: 2110 ? 2170 mhz (ah103ag-pcb2140) typical rf performance at 25 c frequency 2140 mhz gain 25 db input return loss 24 db output return loss 11 db output ip3 +45 dbm output p1db +26.3 dbm w-cdma ch. power @ -45 dbc acpr +18.5 dbm noise figure 2.9 db supply voltage +9 v supply current 275 ma notes: 1. a voltage regulator is used in this circuit (u2) to drop the +9 v to a +5 v usable supply for th e first internal amplifier. it is permissible to remove the regulator and operate the 1 st amplifier stage directly off of +5 v supply onto te st point 1 (tp1). the use of a +5 v supply on the 1 st amplifier stage requires a dropping resistor of 6.8 . a +4.5 v supply can also be used to bypass the 6.8 and can be applied to test point 2 (tp2). s-parameters 22 23 24 25 26 27 2050 2100 2150 2200 2250 frequency (mhz) gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) s21 s11 s22 wideband s-parameters -30 -20 -10 0 10 20 30 0 500 1000 1500 2000 2500 3000 frequency (mhz) gain ( db ) s21 s11 s22 noise figure 0 1 2 3 4 5 2000 2050 2100 2150 2200 frequency (mhz) noise fi g ure ( db ) output ip3 38 40 42 44 46 48 6 8 10 12 14 16 output power per tone (dbm) oip3 ( dbm ) aclr vs. channel power 3gpp w-cdma, test model 1+64 dpch, 5 mhz offset, 2140 mhz -60 -55 -50 -45 -40 14 15 16 17 18 19 output channel power (dbm) aclr ( dbc )
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 6 of 6 march 2005 the communications ed g e tm ah103a high gain, high linearity ?-watt amplifier product information AH103A-G (lead-free package) mechanical information this package is lead -free/green/rohs-compliant. the plating ma terial on the leads is nipdau. it is compatible with both lead- free (maximum 260 c reflow temperature) and lead (maximum 245 c reflow temperature) soldering processes. outline drawing mounting configuration / land pattern thermal specifications parameter rating operating case temperature -40 to +85 c thermal resistance (1) , rth 20.6 c / w junction temperature (2) , tjc 129 c 1. the thermal resistance is referenced from the hottest part of the junction to the ground paddle underneath the device. 2. this corresponds to the typical biasing condition of +4.5v, 75ma on pin 1 and 9v, 200 ma on pins 6, 7 at an 85 c case temperature. a minimum mttf of 1 million hours is achieved for junction temperatures below 160 c. product marking the component will be marked with an ?103ag? designator followed by a alpha- numeric lot code on the top surface of the package. tape and reel specifications for this part are located on the website in the ?application notes? section. esd / msl information esd rating: class 1b value: passes 500 v to <1000 v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iii value: passes 500 v to <1000 v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 2 at +260 c convection reflow standard: jedec standard j-std-020 functional pin layout pin function 1 amp2 input 2 amp1 output / bias amp1 3, 5, 8 ground 4 rf input (amp1 input) 6 rf output (amp2 output) 7 bias amp2 the backside paddle is the source and should be grounded for thermal and electrical purposes. all other pins should be grounded on the pcb. mounting config. notes 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. to ensure reliable oper ation, device ground paddle-to- ground pad solder joint is critical. 4. add mounting screws near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 5. for optimal thermal performance, expose soldermask on backside where it contacts the heatsink. 6. rf trace width depends upon the pc board material and construction. 7. use 1 oz. copper minimum. 8. all dimensions are in millimeters. angles are in degrees. 9. a heatsink underneath the area of the pcb for the mounted device is strictly required for proper thermal operation. damage to the device can occur without the use of one. mttf vs. gnd tab temperature 1 10 100 1000 60 70 80 90 100 110 120 tab temperature (c)
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